<p>The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.</p>
申请公布号
WO2010102306(A1)
申请公布日期
2010.09.10
申请号
WO2010US26570
申请日期
2010.03.08
申请人
SOLEXEL, INC.;RICOLCOL, RAFAEL;KRAMER, JOE;WANG, DAVID, XUAN-QI;MOSLEHI, MEHRDAD, M.
发明人
RICOLCOL, RAFAEL;KRAMER, JOE;WANG, DAVID, XUAN-QI;MOSLEHI, MEHRDAD, M.