| 摘要 |
<p>Disclosed is a group III nitride semiconductor light-emitting element, wherein excellent light emission efficiency is achieved by suppressingcurrent concentration in a transparent electrode and semiconductor layerdirectly below the electrode,and wherein excellent light extraction efficiency is achieved by suppressing lossesdue to absorption or multiple reflection of light produced by the electrode. Also, the light-emitting element has high external quantum efficiency and electrical characteristics. A semiconductor layer (20) is formed by successive depositionof an n-type semiconductor layer (4),a light-emitting layer (5) and a p-type semiconductor layer (6)on a single-crystal underlayer (3) formed on a substrate (11). A transparent electrode (7) is formed on the p-type semiconductor layer (6). An insulating layer (15) is provided on at least part of the p-type semiconductor layer (6)and a transparent electrode (7) is formed covering the insulating layer (15).A positive pole bonding pad (8) is provided ina position (A) corresponding to the insulating layer (15) that is provided on the p-type semiconductor layer (6) on the surface (7a) of the transparent electrode (7). The sheet resistance of the n-type semiconductor layer (4) is lower than the sheet resistance of the transparent electrode (7).</p> |
