METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH
摘要
Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging.
申请公布号
WO2010053915(A3)
申请公布日期
2010.09.10
申请号
WO2009US63114
申请日期
2009.11.03
申请人
MEMC ELECTRONIC MATERIALS, INC.;MASSOUD, JAVIDI;KIMBEL, STEVEN L.