<p>The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.</p>
申请公布号
WO2010101715(A1)
申请公布日期
2010.09.10
申请号
WO2010US24374
申请日期
2010.02.17
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ARENA, CHANTAL;BERTRAM, JR., RONALD, THOMAS;LINDOW, ED
发明人
ARENA, CHANTAL;BERTRAM, JR., RONALD, THOMAS;LINDOW, ED