| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by suppressing a defect in processing for separating a film into a plurality of regions. <P>SOLUTION: The method of manufacturing the semiconductor device includes processes of forming a film on a substrate, and irradiating the film with a light beam through the substrate so as to separate the film into the plurality of regions. A formed film surface is cleaned between the process of forming the film and the process of irradiating the film with the light beam. The process of forming the film is at least one of the process of forming a semiconductor layer on the substrate and the process of forming a backside electrode film on the semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
