| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxially coated silicon wafer having excellent global flatness. SOLUTION: A respective one of silicon wafers provided is placed on a susceptor in an epitaxy reactor; pretreated in a first step only under a hydrogen atmosphere at a hydrogen flow rate of 1 to 100 slm and in a second step with addition of an etching medium to the hydrogen atmosphere at a flow rate of 1 to 100 slm, at a flow rate of the etching medium of 0.5 to 1.5 slm, and at an average temperature of 950 to 1050°C; subsequently coated epitaxially on its polished front side; and removed from the epitaxy reactor; wherein, during the second step of the pretreatment, the power of heating elements arranged above and below the susceptor is regulated in such a way that there is a temperature difference of 5 to 30°C between a radially symmetrical region encompassing the central axis of the silicon wafer to be epitaxially coated and a part of the silicon wafer that lies outside the region. COPYRIGHT: (C)2010,JPO&INPIT
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