| 摘要 |
<p>Fabricating compound semiconductor epitaxial wafer comprises: depositing silicon thin film on metal substrate; depositing compound semiconductor thin film on silicon buffer layer; crystallizing compound semiconductor thin film; applying first thermal treatment process; and applying second thermal treatment process. Fabricating compound semiconductor epitaxial wafer comprises: depositing a silicon thin film on a metal substrate to form a first silicon buffer layer; depositing a compound semiconductor thin film on the first silicon buffer layer to form a second compound semiconductor buffer layer; depositing a compound semiconductor thin film on the second compound semiconductor buffer layer to form a third compound semiconductor buffer layer; crystallizing a compound semiconductor thin film on the third compound semiconductor buffer layer to form a first compound semiconductor epitaxial layer; applying a first thermal treatment process; crystallizing a compound semiconductor thin film on the first compound semiconductor epitaxial layer to form a second compound semiconductor epitaxial layer; and applying a second thermal treatment process to complete fabricating a compound semiconductor epitaxial wafer. An independent claim is a compound semiconductor epitaxial wafer comprising: a metal substrate; a first silicon buffer layer, disposed on the metal substrate; a second compound semiconductor buffer layer, disposed on the first silicon buffer layer; a third compound semiconductor buffer layer, disposed on the second compound semiconductor buffer layer, and went through a first thermal treatment process; a first compound semiconductor epitaxial layer, disposed on the third compound semiconductor buffer layer; and a second compound semiconductor epitaxial layer, disposed on the first compound semiconductor epitaxial layer, and went through a second thermal treatment process.</p> |
