| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of more facilitating the dividing into respective elements by adjusting the warpage of a wafer, in a manufacturing method of a compound semiconductor light emitting element. <P>SOLUTION: In the manufacturing method of the compound semiconductor light emitting element wherein dividing grooves 50 are formed by laser projection against the compound semiconductor element wafer made by laminating a group III nitride semiconductor layer 3 having the film thickness of not less than 5 μm on a sapphire substrate 1 having the thickness of 250-1,000 μm to separate the wafer into the elements, the laser is projected against the wafer from the side of semiconductor layer to form the dividing grooves under a condition that the group III nitride semiconductor layer is on the substrate and, next, the substrate is polished so as to have a thickness of not more than 150 μm to thin it into a thin sheet. The wafer is formed so as to be flat state having no warpage by making the surface roughness Ra (mathematical average roughness) of the rear surface of the substrate so as to be not less than 0.001 μm and not more than 2 μm through polishing and, thereafter, the wafer is separated into the elements. <P>COPYRIGHT: (C)2010,JPO&INPIT |
