| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching method for suppressing the abnormal discharge of plasma. <P>SOLUTION: The plasma etching method includes a plasma discharge preparation step of introducing a first gas which more hardly excites plasma than a second gas into a chamber 10 inside of which a flat plate-type first electrode 11 and second electrode 12 are installed oppositely in parallel, a plasma discharge starting step of introducing the second gas for plasma excitation into the chamber 10 simultaneously with or right after the plasma discharge preparation process to generate a plasma discharge between the first electrode 11 and second electrode 12 through the second gas, and an etching step of introducing an etching gas after the plasma discharge starting step to process a substrate between the first and second electrodes or to clean the inside of the chamber 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
