发明名称 DEVICE AND METHOD FOR MEASURING MECHANICAL CHARACTERISTIC OF THIN FILM
摘要 PROBLEM TO BE SOLVED: To easily measure mechanical characteristics of even a thin film having compressive residual stress. SOLUTION: A resonance device 2 formed nearly in a sector shape on a wafer 4 is rotatably supported by a support 6 in the vicinity of the pivot of a sector shape, and has a comb-teeth shaped electrode 8 for imparting an electrostatic attracting force at one side of the sector. A frequency variable power supply 18 supplies a voltage for vibration to the comb-teeth shaped electrode 8. In a state that the resonance device 2 is used alone, and in a state that a film is formed at the resonance device 2, resonance frequencies in the state that the resonance device 2 is used alone, and in the state that the thin film is formed at the resonance device 2 are measured by a comb-teeth shaped electrode 12 of the resonance device 2 from a change in amplitude when a voltage of which the frequency is changed is supplied from the frequency variable power supply 18. An arithmetic unit 24 calculates the Young's modulus of the thin film based on the resonance frequency of the resonance device 2 alone, the resonance frequency of the film-formed resonance device 2, the density and thickness of the thin film, the Young's modulus, the density and the thickness of the resonance device 2 alone. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010197085(A) 申请公布日期 2010.09.09
申请号 JP20090039412 申请日期 2009.02.23
申请人 HYOGO PREFECTURE;NEW INDUSTRY RESEARCH ORGANIZATION;SHINKO SEIKI CO LTD 发明人 NAMAZU TAKAHIRO;TAKEUCHI TATSUYA;MURAKAMI KOHEI
分类号 G01N9/00;G01N3/00 主分类号 G01N9/00
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