METHOD FOR FORMING VIA IN A SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A via forming method of a semiconductor substrate is provided to form a via having the shape of isotropic etching of high aspect ratio by reducing the undercut in the entrance side of the via of the semiconductor substrate. CONSTITUTION: A silicon substrate is offered on chuck inside the chamber of the vacuum condition(S210). The power is applied to the first power source unit and the second power supply unit to form the plasma inside the chamber(S220). A silicon substrate offered on the chuck inside the chamber is etched using the plasma(S230).