| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase the length of a saddle pin pattern in a channel length direction by selectively etching a width of the bottom of a groove formed within a component separation layer contacting an active area. CONSTITUTION: An element isolation film(102) is formed for defining the active area within a semiconductor substrate(100). A first groove is formed on a gate forming area of the active area. A second groove(H2) is formed for exposing a side surface of the gate forming area formed with the first groove. A gate is formed to surround the side surface of the exposed gate forming area.</p> |
