MANUFACTURING METHOD OF PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A phase change memory device manufacturing method is provided to form a phase change material layer of the same crystal state by maintaining the surface temperature of a wafer as the crystallization temperature of the phase change material. CONSTITUTION: A wafer(120) is offered. The wafer is heat at the predetermined temperature and offered in a deposition chamber(100). A phase change material layer(150) is formed on the heated wafer. The Wafer is heated to the crystallization temperature of the phase change material. The crystallization temperature of the phase change material is within 250°C~350°C range.