<p>A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer.</p>
申请公布号
WO2010098742(A1)
申请公布日期
2010.09.02
申请号
WO2009US34969
申请日期
2009.02.24
申请人
MAXPOWER SEMICONDUCTOR INC.;BLANCHARD, RICHARD, A.;ZENG, JUN