| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a trench so as not to form gouges in a boundary division between a masked oxide film and a semiconductor layer, and a boundary division between an oxide film insulating layer and the semiconductor layer. SOLUTION: The method for forming the trench includes at least three etching steps utilizing at least one of two kinds of etching gases each comprising different compounds as an etching agent. COPYRIGHT: (C)2010,JPO&INPIT
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