| 摘要 |
<p>Disclosed is a polishing composition which is capable of suppressing the etching rate and the dishing amount, while maintaining a high polishing rate. Specifically disclosed is a polishing composition which contains abrasive grains, an oxidizing agent, a polishing accelerator, an anionic surfactant, and a corrosion inhibitor. The abrasive grains are composed of, for example, spherical colloidal silica particles. The oxidizing agent is composed of, for example, hydrogen peroxide. The polishing accelerator is composed of a polishing accelerator (1) and a polishing accelerator (2). The polishing accelerator (1) is composed of, for example, L-tartaric acid, and the polishing accelerator (2) is composed of, for example, phosphoric acid. The anionic surfactant is composed of, for example, laurylbenzenesulfonic acid triethanolamine. The corrosion inhibitor is composed of, for example, benzotriazole.</p> |
