发明名称 METHOD FOR DEPOSITION OF WORKPIECE AND PROCESSING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a deposition method capable of executing sufficient filling in a recess, having a small line width or a small hole diameter, or a recess having a high aspect ratio. SOLUTION: The deposition method is used for forming a thin film on a workpiece W having an insulating layer 4, formed with a recess 6, on its surface. The deposition method has: a barrier-layer forming step for forming a Ti-containing barrier layer 12 on the surface, including the surface in the recess, of the workpiece; a seed-layer forming step for forming a Ru-containing seed layer 16 on the barrier layer; and an auxiliary-seed-layer forming step for forming a Cu-containing auxiliary seed layer 164 on the seed layer in order to assist the conductivity with respect to the seed layer. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010192467(A) 申请公布日期 2010.09.02
申请号 JP20070170656 申请日期 2007.06.28
申请人 TOKYO ELECTRON LTD 发明人 IKEDA TARO;WAKABAYASHI SATORU;NARISHIMA KENSAKU;HATANO TATSUO;MIZUSAWA YASUSHI;YOKOYAMA ATSUSHI;SAKUMA TAKASHI
分类号 H01L21/28;C23C16/14;H01L21/285;H01L21/288;H01L21/3205;H01L23/52 主分类号 H01L21/28
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