| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory control device and a delay quantity measurement method thereof in which even a general tester which is applied to mass production measures the delay quantity of a delay circuit. SOLUTION: The memory control device is configured to write data in a semiconductor storage device, and provided with a plurality of delay circuits for delaying and outputting an input signal. In a normal operation, the plurality of delay circuits independently operate, and respectively delay and output the signal input to each of those delay circuits, and in a test operation, the plurality of delay circuits are connected so that an input signal for test can be transmitted through all the delay circuits, and delayed only for the total of delay quantity, and the input signal for test after delay is output to the outside of the memory control device as an output signal for test. COPYRIGHT: (C)2010,JPO&INPIT |
