| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal, which can manufacture the silicon carbide at a lower temperature than conventional methods. Ž<P>SOLUTION: An Fe-Si alloy which contains iron (Fe) and silicon (Si) and has a molar fraction of Si of ≥33 mol% and <50 mol% is melted on a graphite substrate (carbon source solid) 22 at a temperature of ≥1,210°C and <1,500°C, and a SiC seed crystal (seed crystal) 21 is brought into contact with the molten Fe-Si alloy 12. Further, in the molten Fe-Si alloy 12, a temperature gradient is made to generate in which the graphite substrate 22 side has a high temperature and the SiC seed crystal 21 side has a low temperature. Carbon in the graphite substrate 22 is melted into the molten Fe-Si alloy 12, and SiC to which the molten carbon and Si in the molten Fe-Si alloy 12 combine deposits on the basis of the SiC seed crystal 21, whereby a SiC single crystal growth layer 13 grows. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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