| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing unwanted radiation. Ž<P>SOLUTION: The semiconductor device 100 includes: a semiconductor substrate 1; a first power supply terminal 2 to which a first power supply voltage VDD1 is supplied; a first ground terminal 3 used for connection to a ground; a first semiconductor integrated circuit 4 connected between the first power supply terminal 2 and the first ground terminal 3, formed on the semiconductor substrate 1 and configured by a multilayer wiring; and a conductive first flat plate 5 connected to either the first ground terminal 3 or the first power supply terminal 2, formed on the first semiconductor integrated circuit 4 so as to cover the entire upper part of the first semiconductor integrated circuit and having a plurality of first through-holes 5a on a surface parallel to the substrate surface of the semiconductor substrate 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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