| 摘要 |
<P>PROBLEM TO BE SOLVED: To quickly specify presence as well as position of a defect of a wiring to be inspected in non-contacting manner by applying an electric potential by non-contacting manner to the wiring of TEG. Ž<P>SOLUTION: The method of manufacturing a semiconductor device includes following procedures: a photovoltaic element 2 is formed on the upper surface of a semiconductor substrate 1; on the upper surface on an insulating layer 3 formed on the photovoltaic element 2, a wiring 4t, which is to be inspected, of which one end is connected to a positive electrode 2-1 of the photovoltaic element 2 while the other end is connected to a negative electrode 2-2 of the photovoltaic element 2 is formed; light 11 is made to enter through the lower surface of the semiconductor substrate 1 to excite the photovoltaic element 2 so that an electric potential difference is generated between both ends of the wiring 4t; and a surface electric potential distribution of the wiring 4t is measured using a non-contacting scan type surface electric potential microscope. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
