发明名称 |
METHOD FOR MANUFACTURING NANOWIRES BY USING A STRESS-INDUCED GROWTH |
摘要 |
Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×10−6/° C. of thermal expansion coefficient difference from the intermediate layer; inducing tensile stress due to the thermal expansion coefficient difference between the thin film and the substrate by performing a heat treatment on the substrate with the thin film formed; and growing single-crystalline nanowire of the material by inducing compressive stress at the thin film through cooling of the substrate.
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申请公布号 |
US2010221894(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
US20070064861 |
申请日期 |
2007.12.28 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
LEE WOO YOUNG;HAM JIN HEE;SHIM WOO YOUNG;ROH JONG WOOK;LEE SEUNG HYUN;JEONG KYE JIN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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