| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect an alignment mark from a second surface side, even if a semiconductor substrate becomes thicker than 800 nm, when exposing a pattern on a second surface in accordance with a circuit pattern of a first surface. <P>SOLUTION: A manufacturing method of a semiconductor device includes the steps of: forming first and second alignment marks 12, 13 by forming first and second alignment mark grooves on a first surface S1 of a semiconductor substrate 10 and filling the grooves with a material different from that of the semiconductor substrate; forming a first element on the first surface of the semiconductor substrate in alignment using the first alignment mark; bonding a support substrate 40 to the first surface of the semiconductor substrate; reversing a bonded structure of the support substrate and the semiconductor substrate around a predetermined axis, and thinning the semiconductor substrate from a second surface side of the semiconductor substrate at least until a thickness with which a position of the second alignment mark can be detected by reflected light obtained by application of alignment light from the second surface side S2 of the semiconductor substrate is obtained; and forming a second element (15) on the second surface of the semiconductor substrate in alignment using the second alignment mark. <P>COPYRIGHT: (C)2010,JPO&INPIT |
