Process for Manufacturing a Non-Volatile Memory Electronic Device Integrated on a Semiconductor Substrate and Corresponding Device

摘要

A non-volatile memory electronic device integrated on a semiconductor substrate includes non-volatile memory cells organized in a matrix, and circuitry associated therewith. Each memory cell includes a gate electrode projecting from the semiconductor substrate. Source and drain regions are formed in the semiconductor substrate and aligned with the gate electrodes. At least one portion of the gate electrodes are insulated from each other by air-gaps which are closed on top by a third non-conforming dielectric layer.