| 摘要 |
PURPOSE: To inhibit the reaction of trace raw g, diffused in the region other than a film-forming region an Si wafer, with a low-resistance methal film which is a base, and to prevent the generation of peeling of the film, caused by this reaction, by a method wherein an organic compound active to halogen is added to the inert gas, which inhibits a film formation att eh region other then the film-forming region on the Si wafer. CONSTITUTION: Ar gas, which is inert gas 9, flows from the side of the rear of an Si wafer 1 at a gas flow rate of 100 to 2000sccm and a film formation at the region other a desired film-forming region on the wafer 1 is inhibited by the At gas which is the inert gas 9. Nearly 1 to 10% of ethylene gas which is an organic compound 12 having active electrons such asπelectrons is added to this Ar gas which is the inert gas 9, through a piping 11 connected with a piping 10 immediately before a reaction chamber. At this time, as F atoms in a trace reaction subproduct formed by diffusing reversely the flow of the Ar gas which is the inert gas 9, react with the ethylene gas which is the organic compound 12 having the active electrons, such as theπelectrons, the reaction of the F atoms with a Ti film, which is a base, is inhibited.
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