| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition method for Cu film by which the surface properties can be improved when a Cu film is deposited by a CVD process. Ž<P>SOLUTION: When a Cu film is deposited on a wafer W by a CVD method which includes accommodating the wafer W being a substrate in a chamber, and then introducing a raw material for the deposition of the film containing a monovalent Cu-complex into the chamber in a gas phase state, an organic substance formed by the decomposition of the monovalent Cu-complex is introduced into the treatment vessel in a gas phase state. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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