| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN-based field-effect transistor which has low resistance and high withstand voltage and is less affected by a current collapse phenomenon. <P>SOLUTION: The method for manufacturing the transistor includes a process of epitaxially growing an AlN layer 102, a buffer layer 103, a channel layer 104, a drift layer 105, and an electron supply layer 106 on a substrate 101, a process of forming a recess part 108, a process of forming a protective layer 113, which protects the electron supply layer 106 upon annealing in an alloy process, on the inner surface of the recess part 108, the electron supply layer 106, a source electrode 109, a drain electrode 110, and an element isolation part 130, an alloy process of carrying out annealing for obtaining ohmic contact, a process of eliminating the protective layer 113 and forming a gate insulating film on the inner surface of the recess part 108, the electron supply layer 106, the source electrode 109, the drain electrode 110, and the element isolation part 130, and a process of forming a gate electrode on the gate insulating film of the recess part 108. <P>COPYRIGHT: (C)2010,JPO&INPIT |
