| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a crystallization method for maintaining a same crystallographic orientation of the grains over a large area of the crystal in thin films of copper or other conductive materials used in integrated circuits. <P>SOLUTION: The crystallization method comprises a step of depositing at least partially the material of the crystal on substrate 3 in a thin film 4, a step of heating the substrate 3 and the material deposited on a substrate 3 to a first temperature for a time enabling the internal strains present in the deposited material to be relaxed, and a step of subjecting the substrate 3 and the deposited material to a second temperature and to a uniform bending by placing the substrate 3 on a bending bench 2, wherein a quantity of bending and a difference between the first and the second temperature having values determined from relations bringing into play elastic bending constants (Cij), thermal deformations (x) and thermal expansion coefficients to favour a particular crystallographic orientation of the material deposited along an azimuth direction in relation to a direction parallel to the substrate 3. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
