发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To well maintain a cut state of an electrical fuse. SOLUTION: A semiconductor device includes an electrical fuse and other element, wherein the electrical fuse and the other element each have an upper layer interconnection, a lower layer interconnection, and an interconnection via for connecting the upper layer interconnection and the lower layer interconnection. For keeping a cut state normal, the vias and the upper layer interconnections are formed, in such a manner that the diameter of the via of the electrical fuse is smaller than a cross-sectional area of the upper layer interconnection and the diameter of the via of the other element, and the size of the vias and the upper layer interconnections are changed so as to optimize the ratio of cross-sectional areas of the vias and upper layer interconnections. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010192647(A) 申请公布日期 2010.09.02
申请号 JP20090035048 申请日期 2009.02.18
申请人 RENESAS ELECTRONICS CORP 发明人 SAITO HIROKI
分类号 H01L21/82;H01L27/10 主分类号 H01L21/82
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