发明名称 |
FORMING INTEGRATED CIRCUITS WITH REPLACEMENT METAL GATE ELECTRODES |
摘要 |
In a metal gate replacement process, a stack of at least two polysilicon layers or other materials may be formed. Sidewall spacers may be formed on the stack. The stack may then be planarized. Next, the upper layer of the stack may be selectively removed. Then, the exposed portions of the sidewall spacers may be selectively removed. Finally, the lower portion of the stack may be removed to form a T-shaped trench which may be filled with the metal replacement.
|
申请公布号 |
US2010219456(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
US20100781084 |
申请日期 |
2010.05.17 |
申请人 |
KAVALIEROS JACK;BRASK JUSTIN K;DOCZY MARK L;METZ MATTHEW V;DATTA SUMAN;SHAH UDAY;CHAU ROBERT S |
发明人 |
KAVALIEROS JACK;BRASK JUSTIN K.;DOCZY MARK L.;METZ MATTHEW V.;DATTA SUMAN;SHAH UDAY;CHAU ROBERT S. |
分类号 |
H01L29/78;H01L21/28;H01L21/283 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|