| 摘要 |
<p>A semiconductor stack (1) has a multilayer substrate (2), a plurality of semiconductor modules (3), a plurality of electrolytic capacitors, a plurality of fuses (5) and a cooling fin (6). In the multilayer substrate (2), a P-phase conductor substrate (21), a C-phase conductor substrate (22) and an N-phase conductor substrate overlap each other, with insulating substrates (24b, 24c) in between. The semiconductor modules (3a-3h) are arranged in a row on the rear surface of the multilayer substrate (2). The electrolytic capacitors (4a-4m) are arranged in a row parallel to the row of the semiconductor module on the rear surface of the multilayer substrate (2). The fuses (5a-5m) are arranged on the front surface of the multilayer substrate (2).</p> |
