发明名称 METHOD OF FORMING A MAGETIC TUNNEL JUNCTION STRUCTURE
摘要 <p>In a particular embodiment, an apparatus is disclosed that includes a first electrode and a magnetic tunnel junction (MTJ) structure coupled to the first electrode. A second electrode is coupled to the MTJ structure, the second electrode having a first sidewall. A spacer layer is coupled to the first electrode, the first sidewall of the second electrode, and a sidewall of the MTJ structure. A third electrode is coupled to the second electrode, where the first sidewall of the second electrode contacts a bottom surface of the third electrode at a right angle.</p>
申请公布号 KR20100096191(A) 申请公布日期 2010.09.01
申请号 KR20107013719 申请日期 2008.11.20
申请人 QUALCOMM INCORPORATED 发明人 LI XIA;KANG, SEUNG H.;ZHU XIAOCHUN
分类号 H01L43/12 主分类号 H01L43/12
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