| 摘要 |
An HBT structure and manufacturing method thereof, in which the HBT structure includes an emitter, an intrinsic base, a collector, an insulating sidewall, and a stress-inducing base formed by selective epitaxial growth to locally induce a stress to the HBT structure. Compressive or tensile stress is additionally induced from outside to modify physical and electric properties of a semiconductor layer, thereby improving the performance of the transistor.
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