| 发明名称 |
Metal schemes of trench MOSFET for copper bonding |
| 摘要 |
A trench MOSFET with improved metal schemes is disclosed. The improved contact structure applies a buffer layer to minimize the bonding damage to semiconductor when bonding copper wire upon front source and gate metal without additional cost.
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| 申请公布号 |
US7786528(B2) |
申请公布日期 |
2010.08.31 |
| 申请号 |
US20090318988 |
申请日期 |
2009.01.14 |
| 申请人 |
FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
| 分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
| 代理机构 |
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代理人 |
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| 主权项 |
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