发明名称 |
Method for forming a thin layer on semiconductor substrates |
摘要 |
An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.
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申请公布号 |
US7786010(B2) |
申请公布日期 |
2010.08.31 |
申请号 |
US20070856908 |
申请日期 |
2007.09.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYUN-WOOK;HWANG WAN-GOO;LEE BU-CHEUL;SUH JEONG-SOO;HAN SUNG-IL;CHOI SEONG-JU |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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