NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to form a nonvolatile memory device and a transistor on the same substrate by easily forming the thickness of a second gate insulation layer of the nonvolatile memory device which is different from the thickness of the gate insulation layer of the transistor. CONSTITUTION: A first island shaped semiconductor region(210) has a first source region and a first drain region and is formed on a substrate. A first gate insulation layer includes a first channel formation region(211) and a first insulation layer. A floating gate electrode(216) is formed on the first gate insulation layer and is overlapped with an opening unit. A second gate insulation layer includes a third insulation layer formed on the floating gate electrode. A memory cell array includes a nonvolatile memory device including a control gate electrode on the second gate insulation layer. A second island shaped semiconductor region(230) includes a source region and a second drain region and is formed on the substrate.