METHOD OF MANUFACTURING MULTI-GRAY SCALE PHOTOMASK AND METHOD OF MANUFACTURING SEMICONDUCTOR TRANSISTOR

摘要

PURPOSE: A method for manufacturing a multi gray scale photo mask and a method for manufacturing a semiconductor transistor are provided to suppress a dark defect by preventing the de-lamination of a resist pattern. CONSTITUTION: A semi-transmitting layer(102) and a shielding layer(103) are successively formed on a transmitting substrate(101). A mask blank with a first resist layer is formed on the uppermost layer. A pattern is drawn and developed on the first resist layer. A transmitting unit(111) is formed with the first resist pattern and the shielding layer pattern. A second resist layer is formed to cover the substrate by removing the first resist pattern. A pattern is drawn and developed on the second resist layer and a second resist pattern is formed. A semi-transmitting unit(112) and a shielding unit(113) are formed.