| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To remove a carbon nanotube formed on an insulating film and in a hole from the upper part of the insulating film without damaging the insulating film. <P>SOLUTION: A method includes the following steps. The insulating films 17 and 18 are formed to the upper part of a wiring 15a, and the hole 17a reaching the wiring 15a is formed by patterning the insulating films 17 and 18. The carbon nanotube 22 is formed to the upper surfaces of the insulating films 17 and 18 in the hole 17a, and second insulating films 23 are formed on the layer of the carbon nanotube 22. The carbon nanotube 22 is exposed by etching the second insulating films 23 while the second insulating films 23 are left in the recess of the layer of the carbon nanotube 22. The places of the upper ends of the carbon nanotube 22 are equalized by etching the carbon nanotube 22, the second insulating films 23 on the carbon nanotube 22 are etched and the carbon nanotube 22 is etched and removed from the upper surface of the insulating film 17 while being left in the hole 17a. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
