发明名称 |
LATERAL BIPOLAR JUNCTION TRANSISTOR |
摘要 |
A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.
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申请公布号 |
US2010213507(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20090500607 |
申请日期 |
2009.07.10 |
申请人 |
KO CHING-CHUNG;LEE TUNG-HSING;ZENG ZHENG |
发明人 |
KO CHING-CHUNG;LEE TUNG-HSING;ZENG ZHENG |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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