发明名称 LATERAL BIPOLAR JUNCTION TRANSISTOR
摘要 A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.
申请公布号 US2010213507(A1) 申请公布日期 2010.08.26
申请号 US20090500607 申请日期 2009.07.10
申请人 KO CHING-CHUNG;LEE TUNG-HSING;ZENG ZHENG 发明人 KO CHING-CHUNG;LEE TUNG-HSING;ZENG ZHENG
分类号 H01L29/739 主分类号 H01L29/739
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