| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of easily forming transistors of different thickness of gate insulating films. SOLUTION: A method of manufacturing the semiconductor device includes the steps of: forming a first silicon oxide film 6 and a second silicon oxide film on a semiconductor substrate 1 by oxidizing the semiconductor substrate 1; forming a first insulating film 8 by a CVD method on the first silicon oxide film 6 after removing the second silicon oxide film; and forming a second insulating film 8 by the CVD method in a region where the second silicon oxide film is removed. The first silicon oxide film 6 is formed in a region different from the second silicon oxide film, and the first insulating film 8 and the second insulating film 8 are higher than the silicon oxide film in permittivity, and the thickness of the first insulating film 8 is thicker than that of the first silicon oxide film 6. COPYRIGHT: (C)2010,JPO&INPIT
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