| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic material storage apparatus that suppresses the peak of a load current to be supplied from a power supply (battery) and is suitable for mobile use. SOLUTION: After a digit line DL is charged by a power supply voltage Vcc upon turning on a switching element S2, the switching element S2 is turned off and a switching element S1 is turned on to connect the digit line DL to a ground voltage Vss. In the same way, a bit line BL is charged by a switching element S3 to a data voltage according to write data Din so that data write current Iw(0) or Iw(1) flows. After that, the bit line BL is connected to a voltage different from the data voltage by a switching element S4a or S4b while the switching element S3 is turned off. A load current from the power supply to an MRAM device is supplied when a digit line capacitance 60 and a bit line capacitance 65 are charged. The load current is not consumed when a data write current Ip and Iw(0), Iw(1) flow. The digit line capacitance 60 includes a capacitive element 62b connected to the digit line DL. COPYRIGHT: (C)2010,JPO&INPIT
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