| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon single crystal capable of preventing the occurrence of dislocation of tail part of the silicon single crystal even in the case of growing the silicon single crystal added with a large quantity of a dopant and having a low resistivity, and a silicon single crystal manufactured by the method. SOLUTION: In this method of manufacturing a silicon single crystal 6, the silicon single crystal 6 is drawn from a melt liquid 5 containing a dopant in a drawing furnace 2 in which a heat shielding member 8 is laid over the melt liquid 5, and in the drawing furnace 2, a purge gas 17 which is supplied from outside the drawing furnace 2 and after passing through the interval d between the bottom end of the heat shielding member 8 and the melt liquid 5 discharged outside the drawing furnace 2, and by increasing the gas flow rate, that is, the rate of the purge gas 17 passing the interval d during the growth of the silicon single crystal 6, evaporation of the dopant contained in the melt liquid 5 is promoted and the concentration of the dopant contained in the melt liquid 5 is lowered. COPYRIGHT: (C)2010,JPO&INPIT |
