| 摘要 |
<p>Provided is a method for forming an epitaxial wafer, wherein a gallium nitride semiconductor having excellent crystal qualities can be deposited on a gallium oxide region. In a step (S107), an AlN buffer layer (13) is grown. In a step (S108), a raw material gas (G1) containing trimethylaluminum and ammonia is supplied to a growing furnace (10) in addition to nitrogen (N2) at time (t5), and an AlN buffer layer (13) is grown on a main surface (11a). The AlN buffer layer (13) is so called a low-temperature buffer layer. After starting formation of the buffer layer (13), hydrogen (H2) is started to be supplied at time (t6) in a step (S109). At the time (t6), H2, N2, TMA and NH3 are supplied to the growing furnace (10). During the time between the time (t6) and the time (t7), the supply quantity of H2 is increased, and at the time (t7), the increase of H2 is stopped and a fixed quantity of H2 is supplied. At the time (t7), H2, TMA and NH3 are supplied to the growing furnace (10).</p> |
