| 摘要 |
A method for producing a high quality wafer comprising Al x Ga y In z N, wherein 0<y‰¤1 and x+y+z=1, the method comprising the steps of: chemically mechanically polishing (CMP) said Al x Ga y In z N wafer blank at its Ga-side utilizing an acidic CMP slurry comprising abrasive particles having particle sizes of less than 200 nm, an acid, and optionally at least one oxidizing agent. |
