发明名称 Method and system for optimizing a BARC stack
摘要 In the present invention, a BARC stack comprising at least a first BARC layer and at least a second BARC layer is optimized for reducing substrate reflectivity in lithographic processing applications. The first BARC layer is positioned adjacent the resist layer, while the second BARC layer is positioned adjacent the first BARC layer. The optical parameters of the first BARC layer are determined to be slightly different from the optical parameters of the resist, thus resulting in a small optical step at the interface resist/first BARC. Furthermore, the second BARC may be selected to have optical parameters such that the optical step at the interface first BARC/second BARC is slightly larger but still relatively small compared to the optical step between resist and substrate. The thicknesses for the BARC layers can be determined from substrate reflectivity calculations. The latter allows obtaining a low substrate reflectivity for various pitches in a pattern to be printed.
申请公布号 US7781349(B2) 申请公布日期 2010.08.24
申请号 US20050224415 申请日期 2005.09.12
申请人 IMEC 发明人 OP DE BEECK MARIA
分类号 H01L21/469;G03F1/00 主分类号 H01L21/469
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