发明名称 Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor
摘要 An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
申请公布号 US7781296(B2) 申请公布日期 2010.08.24
申请号 US20050570731 申请日期 2005.06.07
申请人 STMICROELECTRONICS SAS;KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 HALIMAOUI AOMAR;EL FARHANE REBHA;FROMENT BENOIT
分类号 H01L21/20;H01L21/02;H01L29/92 主分类号 H01L21/20
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