发明名称 |
Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor |
摘要 |
An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
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申请公布号 |
US7781296(B2) |
申请公布日期 |
2010.08.24 |
申请号 |
US20050570731 |
申请日期 |
2005.06.07 |
申请人 |
STMICROELECTRONICS SAS;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HALIMAOUI AOMAR;EL FARHANE REBHA;FROMENT BENOIT |
分类号 |
H01L21/20;H01L21/02;H01L29/92 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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