发明名称 |
Schottky diode structures having deep wells for improving breakdown voltages |
摘要 |
An integrated circuit structure includes a semiconductor substrate; a well region of a first conductivity type over the semiconductor substrate; a metal-containing layer on the well region, wherein the metal-containing layer and the well region form a Schottky barrier; an isolation region encircling the metal-containing layer; and a deep-well region of a second conductivity type opposite the first conductivity type under the metal-containing layer. The deep-well region has at least a portion vertically overlapping a portion of the metal-containing layer. The deep-well region is vertically spaced apart from the isolation region and the metal-containing layer by the well region.
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申请公布号 |
US7781859(B2) |
申请公布日期 |
2010.08.24 |
申请号 |
US20080054224 |
申请日期 |
2008.03.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIANG PUO-YU;LIN TSAI CHUN;YAO CHIH-WEN (ALBERT);HO DAVID |
分类号 |
H01L29/47 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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