| 摘要 |
<p>PURPOSE: In the state where the manufacturing method of the phase change memory device constitutes the metal layer at the upper part of the metal silicide layer, the etching process of the insulating layer is proceed. The attack of the cobalt silicide layer by the metal layer is prevented. CONSTITUTION: The oxide film(210) is formed on the silicon substrate(200). The hole in which the oxide film is etched and exposing the surface part of the silicon substrate is formed. The silicon film is buried within hole. The buried silicon film as described above is the etch back. The metal silicide layer(230) is formed on the surface of the silicon film etched back as described above. The material(251) for the first heater is buried within the hole in which the metal silicide layer is formed.</p> |
