| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a group-III nitride semiconductor light-emitting device capable of excellently contacting with a p-electrode, and reducing a drive voltage. <P>SOLUTION: A p-type contact layer 16 is formed of a three-layered structure stacked from the side of a p-type clad layer 15 in the order of a first p-type contact layer 16a, a second p-type contact layer 16b, and a third p-type contact layer 16c. The first p-type contact layer 16a has an Mg concentration not higher than 3×10<SP>19</SP>/cm<SP>3</SP>. The second p-type contact layer 16b has an Mg concentration in a range between 4×10<SP>19</SP>/cm<SP>3</SP>and 9×10<SP>19</SP>/cm<SP>3</SP>, and is 10 to 60 nm in thickness. The third p-type contact layer has the Mg concentration not lower than 1×10<SP>20</SP>/cm<SP>3</SP>, and is 2 to 10 nm in thickness. Furthermore, the thickness of the first p-type contact layer 16a and that of the second p-type contact layer 16b is totally 20 to 300 nm. <P>COPYRIGHT: (C)2010,JPO&INPIT |
