| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing semiconductor device that can improve the yield of products, by preventing damages to a compound semiconductor, or the like, in the production process and attain a low-cost and high-luminance light-emitting substance by suppressing increase in the production cost. <P>SOLUTION: A method for producing a semiconductor device includes forming an aluminum layer on a core substrate 1, anodizing the aluminum layer into an alumina layer having a plurality of nanoholes; stacking an n-type GaN layer 6 by growing crystals of a compound semiconductor such as an n-type GaN, or the like, on the alumina layer and inside the nanoholes; and dissolving the alumina layer with an acid. As a result, gaps K are formed and a structure in which the core substrate 1 is jointed to the n-type GaN layer, through portions other than the gaps K, having a very small area, is generated. Then a laser beam L is applied to the n-type GaN layer 6 through the core substrate 1, and the n-type GaN layer is separated from the core substrate 1 by a laser lift-off method. <P>COPYRIGHT: (C)2010,JPO&INPIT |
